YaBeSH Engineering and Technology Library

    • Journals
    • PaperQuest
    • YSE Standards
    • YaBeSH
    • Login
    View Item 
    •   YE&T Library
    • ASME
    • Journal of Heat Transfer
    • View Item
    •   YE&T Library
    • ASME
    • Journal of Heat Transfer
    • View Item
    • All Fields
    • Source Title
    • Year
    • Publisher
    • Title
    • Subject
    • Author
    • DOI
    • ISBN
    Advanced Search
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Archive

    Thermal Properties for Bulk Silicon Based on the Determination of Relaxation Times Using Molecular Dynamics

    Source: Journal of Heat Transfer:;2010:;volume( 132 ):;issue: 001::page 12401
    Author:
    Javier V. Goicochea
    ,
    Marcela Madrid
    ,
    Cristina Amon
    DOI: 10.1115/1.3211853
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Molecular dynamics simulations are performed to estimate acoustical and optical phonon relaxation times, dispersion relations, group velocities, and specific heat of silicon needed to solve the Boltzmann transport equation (BTE) at 300 K and 1000 K. The relaxation times are calculated from the temporal decay of the autocorrelation function of the fluctuation of total energy of each normal mode in the ⟨100⟩ family of directions, where the total energy of each mode is obtained from the normal mode decomposition of the motion of the silicon atoms over a period of time. Additionally, silicon dispersion relations are directly determined from the equipartition theorem obtained from the normal mode decomposition. The impact of the anharmonic nature of the potential energy function on the thermal expansion of the crystal is determined by computing the lattice parameter at the cited temperatures using a NPT (i.e., constant number of atoms, pressure, and temperature) ensemble, and are compared with experimental values reported in the literature and with those computed analytically using the quasiharmonic approximation. The dependence of the relaxation times with respect to the frequency is identified with two functions that follow the functional form of the relaxation time expressions reported in the literature. From these functions a simplified version of relaxation times for each normal mode is extracted. Properties, such as group and phase velocities, thermal conductivity, and mean free path, needed to further develop a methodology for the thermal analysis of electronic devices (i.e., from nano- to macroscales) are determined once the relaxation times and dispersion relations are obtained. The thermal properties are validated by comparing the BTE-based thermal conductivity against the predictions obtained from the Green–Kubo method. It is found that the relaxation times closely resemble the ones obtained from perturbation theory at high temperatures; the contribution to the thermal conductivity of the transverse acoustic, longitudinal acoustic, and longitudinal optical modes being approximately 30%, 60%, and 10%, respectively, and the contribution of the transverse optical mode negligible.
    keyword(s): Temperature , Relaxation (Physics) , Phonons , Thermal conductivity , Silicon , Dispersion relations , Thermal properties AND Functions ,
    • Download: (744.3Kb)
    • Show Full MetaData Hide Full MetaData
    • Get RIS
    • Item Order
    • Go To Publisher
    • Price: 5000 Rial
    • Statistics

      Thermal Properties for Bulk Silicon Based on the Determination of Relaxation Times Using Molecular Dynamics

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/143953
    Collections
    • Journal of Heat Transfer

    Show full item record

    contributor authorJavier V. Goicochea
    contributor authorMarcela Madrid
    contributor authorCristina Amon
    date accessioned2017-05-09T00:39:09Z
    date available2017-05-09T00:39:09Z
    date copyrightJanuary, 2010
    date issued2010
    identifier issn0022-1481
    identifier otherJHTRAO-27878#012401_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/143953
    description abstractMolecular dynamics simulations are performed to estimate acoustical and optical phonon relaxation times, dispersion relations, group velocities, and specific heat of silicon needed to solve the Boltzmann transport equation (BTE) at 300 K and 1000 K. The relaxation times are calculated from the temporal decay of the autocorrelation function of the fluctuation of total energy of each normal mode in the ⟨100⟩ family of directions, where the total energy of each mode is obtained from the normal mode decomposition of the motion of the silicon atoms over a period of time. Additionally, silicon dispersion relations are directly determined from the equipartition theorem obtained from the normal mode decomposition. The impact of the anharmonic nature of the potential energy function on the thermal expansion of the crystal is determined by computing the lattice parameter at the cited temperatures using a NPT (i.e., constant number of atoms, pressure, and temperature) ensemble, and are compared with experimental values reported in the literature and with those computed analytically using the quasiharmonic approximation. The dependence of the relaxation times with respect to the frequency is identified with two functions that follow the functional form of the relaxation time expressions reported in the literature. From these functions a simplified version of relaxation times for each normal mode is extracted. Properties, such as group and phase velocities, thermal conductivity, and mean free path, needed to further develop a methodology for the thermal analysis of electronic devices (i.e., from nano- to macroscales) are determined once the relaxation times and dispersion relations are obtained. The thermal properties are validated by comparing the BTE-based thermal conductivity against the predictions obtained from the Green–Kubo method. It is found that the relaxation times closely resemble the ones obtained from perturbation theory at high temperatures; the contribution to the thermal conductivity of the transverse acoustic, longitudinal acoustic, and longitudinal optical modes being approximately 30%, 60%, and 10%, respectively, and the contribution of the transverse optical mode negligible.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleThermal Properties for Bulk Silicon Based on the Determination of Relaxation Times Using Molecular Dynamics
    typeJournal Paper
    journal volume132
    journal issue1
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.3211853
    journal fristpage12401
    identifier eissn1528-8943
    keywordsTemperature
    keywordsRelaxation (Physics)
    keywordsPhonons
    keywordsThermal conductivity
    keywordsSilicon
    keywordsDispersion relations
    keywordsThermal properties AND Functions
    treeJournal of Heat Transfer:;2010:;volume( 132 ):;issue: 001
    contenttypeFulltext
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian
     
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian