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    Raman Thermometry Measurements and Thermal Simulations for MEMS Bridges at Pressures From 0.05 Torr to 625 Torr

    Source: Journal of Heat Transfer:;2010:;volume( 132 ):;issue: 007::page 72402
    Author:
    Leslie M. Phinney
    ,
    Justin R. Serrano
    ,
    Edward S. Piekos
    ,
    John R. Torczynski
    ,
    Michael A. Gallis
    ,
    Allen D. Gorby
    DOI: 10.1115/1.4000965
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper reports on experimental and computational investigations into the thermal performance of microelectromechanical systems (MEMS) as a function of the pressure of the surrounding gas. High spatial resolution Raman thermometry was used to measure the temperature profiles on electrically heated, polycrystalline silicon bridges that are nominally 10 μm wide, 2.25 μm thick, and either 200 μm or 400 μm long in nitrogen atmospheres with pressures ranging from 0.05 Torr to 625 Torr (6.67 Pa–83.3 kPa). Finite element modeling of the thermal behavior of the MEMS bridges is performed and compared with the experimental results. Noncontinuum gas effects are incorporated into the continuum finite element model by imposing temperature discontinuities at gas-solid interfaces that are determined from noncontinuum simulations. The results indicate that gas-phase heat transfer is significant for devices of this size at ambient pressures but becomes minimal as the pressure is reduced below 5 Torr. The model and experimental results are in qualitative agreement, and better quantitative agreement requires increased accuracy in the geometrical and material property values.
    keyword(s): Pressure , Temperature , Heat transfer , Measurement , Temperature measurement , Microelectromechanical systems , Engineering simulation , Polysilicon AND Temperature profiles ,
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      Raman Thermometry Measurements and Thermal Simulations for MEMS Bridges at Pressures From 0.05 Torr to 625 Torr

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    http://yetl.yabesh.ir/yetl1/handle/yetl/143824
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    contributor authorLeslie M. Phinney
    contributor authorJustin R. Serrano
    contributor authorEdward S. Piekos
    contributor authorJohn R. Torczynski
    contributor authorMichael A. Gallis
    contributor authorAllen D. Gorby
    date accessioned2017-05-09T00:38:54Z
    date available2017-05-09T00:38:54Z
    date copyrightJuly, 2010
    date issued2010
    identifier issn0022-1481
    identifier otherJHTRAO-27891#072402_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/143824
    description abstractThis paper reports on experimental and computational investigations into the thermal performance of microelectromechanical systems (MEMS) as a function of the pressure of the surrounding gas. High spatial resolution Raman thermometry was used to measure the temperature profiles on electrically heated, polycrystalline silicon bridges that are nominally 10 μm wide, 2.25 μm thick, and either 200 μm or 400 μm long in nitrogen atmospheres with pressures ranging from 0.05 Torr to 625 Torr (6.67 Pa–83.3 kPa). Finite element modeling of the thermal behavior of the MEMS bridges is performed and compared with the experimental results. Noncontinuum gas effects are incorporated into the continuum finite element model by imposing temperature discontinuities at gas-solid interfaces that are determined from noncontinuum simulations. The results indicate that gas-phase heat transfer is significant for devices of this size at ambient pressures but becomes minimal as the pressure is reduced below 5 Torr. The model and experimental results are in qualitative agreement, and better quantitative agreement requires increased accuracy in the geometrical and material property values.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleRaman Thermometry Measurements and Thermal Simulations for MEMS Bridges at Pressures From 0.05 Torr to 625 Torr
    typeJournal Paper
    journal volume132
    journal issue7
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4000965
    journal fristpage72402
    identifier eissn1528-8943
    keywordsPressure
    keywordsTemperature
    keywordsHeat transfer
    keywordsMeasurement
    keywordsTemperature measurement
    keywordsMicroelectromechanical systems
    keywordsEngineering simulation
    keywordsPolysilicon AND Temperature profiles
    treeJournal of Heat Transfer:;2010:;volume( 132 ):;issue: 007
    contenttypeFulltext
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