Molecular Dynamics Simulation of Phonon Scattering at Silicon/Germanium Interfaces

Abstract

Detailed phonon transport at Si/Ge interfaces is studied using the molecular dynamics wave-packet method. Three types of interfaces are investigated: A smooth interface, an interface with random roughness, and an interface with a regularly patterned roughness. The phonon transmissivity for each case is calculated as a function of phonon frequency, roughness characteristic length, and atomic structure. For a smooth interface, the transmissivities predicted by the MD simulations agree well with the acoustic mismatch model based on the continuum assumption. The rough interface simulation results indicate that random roughness is the source of incoherent phonon scattering and decreases the phonon transmission. Periodic structures such as the regularly patterned roughness employed in this paper cause strong phonon wave interference and may restore phonon transmission as the layer thickness increases.