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contributor authorPatrick E. Hopkins
contributor authorPamela M. Norris
date accessioned2017-05-09T00:33:53Z
date available2017-05-09T00:33:53Z
date copyrightApril, 2009
date issued2009
identifier issn0022-1481
identifier otherJHTRAO-27859#043208_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/141094
description abstractWith the ever decreasing characteristic lengths of nanomaterials, nonequilibrium electron-phonon scattering can be affected by additional scattering processes at the interface of two materials. Electron-interface scattering would lead to another path of energy flow for the high-energy electrons other than electron-phonon coupling in a single material. Traditionally, electron-phonon coupling in transport is analyzed with a diffusion (Fourier) based model, such as the two temperature model (TTM). However, in thin films with thicknesses less than the electron mean free path, ballistic electron transport could lead to electron-interface scattering, which is not taken into account in the TTM. The ballistic component of electron transport, leading to electron-interface scattering during ultrashort pulsed laser heating, is studied here by a ballistic-diffusive approximation of the Boltzmann transport equation. The results for electron-phonon equilibration times are compared with calculations with TTM based approximations and experimental data on Au thin films.
publisherThe American Society of Mechanical Engineers (ASME)
titleContribution of Ballistic Electron Transport to Energy Transfer During Electron-Phonon Nonequilibrium in Thin Metal Films
typeJournal Paper
journal volume131
journal issue4
journal titleJournal of Heat Transfer
identifier doi10.1115/1.3072929
journal fristpage43208
identifier eissn1528-8943
treeJournal of Heat Transfer:;2009:;volume( 131 ):;issue: 004
contenttypeFulltext


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