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    On the CMP Material Removal at the Molecular Scale

    Source: Journal of Tribology:;2007:;volume( 129 ):;issue: 002::page 436
    Author:
    L. Chang
    DOI: 10.1115/1.2647829
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Understanding of the mechanisms of material removal is of fundamental importance in chemical-mechanical planarization of semiconductor wafers. A plausible mechanism at work is that the material is removed at the molecular scale by debonding the chemistry-weakened molecules at the wafer surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation.
    keyword(s): Particulate matter , Semiconductor wafers , Polishing , Chemistry , Mechanisms AND Slurries ,
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      On the CMP Material Removal at the Molecular Scale

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    contributor authorL. Chang
    date accessioned2017-05-09T00:25:55Z
    date available2017-05-09T00:25:55Z
    date copyrightApril, 2007
    date issued2007
    identifier issn0742-4787
    identifier otherJOTRE9-28749#436_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/136918
    description abstractUnderstanding of the mechanisms of material removal is of fundamental importance in chemical-mechanical planarization of semiconductor wafers. A plausible mechanism at work is that the material is removed at the molecular scale by debonding the chemistry-weakened molecules at the wafer surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleOn the CMP Material Removal at the Molecular Scale
    typeJournal Paper
    journal volume129
    journal issue2
    journal titleJournal of Tribology
    identifier doi10.1115/1.2647829
    journal fristpage436
    journal lastpage437
    identifier eissn1528-8897
    keywordsParticulate matter
    keywordsSemiconductor wafers
    keywordsPolishing
    keywordsChemistry
    keywordsMechanisms AND Slurries
    treeJournal of Tribology:;2007:;volume( 129 ):;issue: 002
    contenttypeFulltext
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