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    Thermal Stress Analysis for Rapid Thermal Process With Convective Cooling

    Source: Journal of Manufacturing Science and Engineering:;2005:;volume( 127 ):;issue: 003::page 564
    Author:
    Shih-Yu Hung
    ,
    Ching-Kong Chao
    DOI: 10.1115/1.1949618
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A fast temperature ramp of rapid thermal processing (RTP) with convective cooling used to shorten the cooling time for the wafer is presented in this paper. Based on thermal and stress analyses, the behavior of the highly coupled physics in RTP, such as radiative heat transfer, transient flow, and thermal stress is studied in detail. From simulation results of the flow field, a large recirculation cell between the wafer edge and the chamber wall is predicted and the effect of buoyancy on the behavior of the flow field is examined. Since the buoyancy-induced recirculation aggregates thermal nonuniformity due to edge effect, a guard ring is then suggested to be placed at the edge of the wafer to reduce the heat loss from the wafer edge and reflect the radiative energy back into the wafer during the cooling process. Furthermore, a large inlet gas mass flow rate is found to suppress the recirculation and shorten the cooling time. However, a fast convective cooling rate would result in a significant temperature difference between center and edge of the wafer, thus causing material failure due to an increase of thermal stresses.
    keyword(s): Temperature , Cooling , Semiconductor wafers , Flow (Dynamics) , Thermal stresses , Buoyancy , Stress , Rapid thermal processing AND Failure ,
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      Thermal Stress Analysis for Rapid Thermal Process With Convective Cooling

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/132166
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    • Journal of Manufacturing Science and Engineering

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    contributor authorShih-Yu Hung
    contributor authorChing-Kong Chao
    date accessioned2017-05-09T00:16:54Z
    date available2017-05-09T00:16:54Z
    date copyrightAugust, 2005
    date issued2005
    identifier issn1087-1357
    identifier otherJMSEFK-27879#564_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/132166
    description abstractA fast temperature ramp of rapid thermal processing (RTP) with convective cooling used to shorten the cooling time for the wafer is presented in this paper. Based on thermal and stress analyses, the behavior of the highly coupled physics in RTP, such as radiative heat transfer, transient flow, and thermal stress is studied in detail. From simulation results of the flow field, a large recirculation cell between the wafer edge and the chamber wall is predicted and the effect of buoyancy on the behavior of the flow field is examined. Since the buoyancy-induced recirculation aggregates thermal nonuniformity due to edge effect, a guard ring is then suggested to be placed at the edge of the wafer to reduce the heat loss from the wafer edge and reflect the radiative energy back into the wafer during the cooling process. Furthermore, a large inlet gas mass flow rate is found to suppress the recirculation and shorten the cooling time. However, a fast convective cooling rate would result in a significant temperature difference between center and edge of the wafer, thus causing material failure due to an increase of thermal stresses.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleThermal Stress Analysis for Rapid Thermal Process With Convective Cooling
    typeJournal Paper
    journal volume127
    journal issue3
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.1949618
    journal fristpage564
    journal lastpage571
    identifier eissn1528-8935
    keywordsTemperature
    keywordsCooling
    keywordsSemiconductor wafers
    keywordsFlow (Dynamics)
    keywordsThermal stresses
    keywordsBuoyancy
    keywordsStress
    keywordsRapid thermal processing AND Failure
    treeJournal of Manufacturing Science and Engineering:;2005:;volume( 127 ):;issue: 003
    contenttypeFulltext
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