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contributor authorCristian V. Ciobanu
contributor authorAdrian Barbu
contributor authorRyan M. Briggs
date accessioned2017-05-09T00:16:16Z
date available2017-05-09T00:16:16Z
date copyrightOctober, 2005
date issued2005
identifier issn0094-4289
identifier otherJEMTA8-27074#462_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/131863
description abstractWe investigate the interactions between substitutional carbon atoms on the defect free, (2×1) reconstructed Si(001) surface, and bring evidence that the interaction energy differs significantly from the inverse-cube distance dependence that is predicted by the theory of force dipoles on an elastic half-space. Based on Tersoff potentials, we also calculate the interactions between carbon atoms and dimer vacancies. The calculations indicate that dimer vacancies (DVs) are strongly stabilized by fourth-layer C atoms placed directly underneath them. By use of simple model Monte Carlo simulations, we show that the computed interactions between carbon atoms and DVs lead to self-assembled vacancy lines, in qualitative agreement with recent experimental results.
publisherThe American Society of Mechanical Engineers (ASME)
titleInteractions of Carbon Atoms and Dimer Vacancies on the Si(001) Surface
typeJournal Paper
journal volume127
journal issue4
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.2019898
journal fristpage462
journal lastpage467
identifier eissn1528-8889
keywordsAtoms
keywordsCarbon AND Engineering simulation
treeJournal of Engineering Materials and Technology:;2005:;volume( 127 ):;issue: 004
contenttypeFulltext


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