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    Stability of Dislocation Short-Range Reactions in BCC Crystals

    Source: Journal of Engineering Materials and Technology:;1999:;volume( 121 ):;issue: 002::page 143
    Author:
    Hanchen Huang
    ,
    Nasr Ghoniem
    ,
    Tomas Diaz de la Rubia
    ,
    Moono Rhee
    ,
    Hussein Zbib
    ,
    John Hirth
    DOI: 10.1115/1.2812359
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: The stability of short-range reactions between two dislocations of parallel line vectors which glide on two parallel slip planes in BCC crystals is determined. The two dislocations are assumed to be infinitely long, and their interaction is treated as elastic. The interaction and self-energies are both computed for dynamically moving dislocations, where the dependence on dislocation velocity is taken into account. The stability of the reaction is determined as a function of the following phase space variables: relative angle, relative speed, dislocation mobility, Burgers vector, separation of slip planes, and external force. Our results indicate that the dynamic formation of dislocation dipoles or tilt wall embryos occurs only over a small range of the investigated phase space. Internal effects are shown to be important at close separation, because of the large force between the two dislocations comprising the dipole or tilt wall embryo. We find that destabilization of the dislocation dipoles or tilt wall embryos is enhanced by externally applied stresses or by stress fields of neighboring dislocations.
    keyword(s): Stability , Crystals , Dislocations , Dipoles (Electromagnetism) , Phase space , Force , Separation (Technology) AND Stress ,
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      Stability of Dislocation Short-Range Reactions in BCC Crystals

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    http://yetl.yabesh.ir/yetl1/handle/yetl/122243
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    contributor authorHanchen Huang
    contributor authorNasr Ghoniem
    contributor authorTomas Diaz de la Rubia
    contributor authorMoono Rhee
    contributor authorHussein Zbib
    contributor authorJohn Hirth
    date accessioned2017-05-08T23:59:48Z
    date available2017-05-08T23:59:48Z
    date copyrightApril, 1999
    date issued1999
    identifier issn0094-4289
    identifier otherJEMTA8-26997#143_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/122243
    description abstractThe stability of short-range reactions between two dislocations of parallel line vectors which glide on two parallel slip planes in BCC crystals is determined. The two dislocations are assumed to be infinitely long, and their interaction is treated as elastic. The interaction and self-energies are both computed for dynamically moving dislocations, where the dependence on dislocation velocity is taken into account. The stability of the reaction is determined as a function of the following phase space variables: relative angle, relative speed, dislocation mobility, Burgers vector, separation of slip planes, and external force. Our results indicate that the dynamic formation of dislocation dipoles or tilt wall embryos occurs only over a small range of the investigated phase space. Internal effects are shown to be important at close separation, because of the large force between the two dislocations comprising the dipole or tilt wall embryo. We find that destabilization of the dislocation dipoles or tilt wall embryos is enhanced by externally applied stresses or by stress fields of neighboring dislocations.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleStability of Dislocation Short-Range Reactions in BCC Crystals
    typeJournal Paper
    journal volume121
    journal issue2
    journal titleJournal of Engineering Materials and Technology
    identifier doi10.1115/1.2812359
    journal fristpage143
    journal lastpage150
    identifier eissn1528-8889
    keywordsStability
    keywordsCrystals
    keywordsDislocations
    keywordsDipoles (Electromagnetism)
    keywordsPhase space
    keywordsForce
    keywordsSeparation (Technology) AND Stress
    treeJournal of Engineering Materials and Technology:;1999:;volume( 121 ):;issue: 002
    contenttypeFulltext
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