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    Thermoelectrically Driven Melt Motion During Floating Zone Crystal Growth With an Axial Magnetic Field

    Source: Journal of Fluids Engineering:;1998:;volume( 120 ):;issue: 004::page 839
    Author:
    Y. Y. Khine
    ,
    J. S. Walker
    DOI: 10.1115/1.2820748
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: During semiconductor crystal growth with an externally applied magnetic field, thermoelectric currents may drive a melt circulation which affects the properties of the crystal. This paper treats a model problem for a floating zone process with a uniform axial magnetic field, with planar solid-liquid interfaces, with a cylindrical free surface, with a parabolic temperature variation along the crystal-melt interface, and with an isothermal feed rod-melt interface. The ratio of the electrical conductivities of the liquid and solid is a key parameter. The azimuthal velocity is much larger than the radial or axial velocity. There is radially outward flow near the crystal-melt interface which should be beneficial for the mass transport of dopants and species.
    keyword(s): Crystal growth , Motion , Magnetic fields , Crystals , Current , Semiconductors (Materials) , Flow (Dynamics) AND Temperature ,
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      Thermoelectrically Driven Melt Motion During Floating Zone Crystal Growth With an Axial Magnetic Field

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/120586
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    • Journal of Fluids Engineering

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    contributor authorY. Y. Khine
    contributor authorJ. S. Walker
    date accessioned2017-05-08T23:56:54Z
    date available2017-05-08T23:56:54Z
    date copyrightDecember, 1998
    date issued1998
    identifier issn0098-2202
    identifier otherJFEGA4-27134#839_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120586
    description abstractDuring semiconductor crystal growth with an externally applied magnetic field, thermoelectric currents may drive a melt circulation which affects the properties of the crystal. This paper treats a model problem for a floating zone process with a uniform axial magnetic field, with planar solid-liquid interfaces, with a cylindrical free surface, with a parabolic temperature variation along the crystal-melt interface, and with an isothermal feed rod-melt interface. The ratio of the electrical conductivities of the liquid and solid is a key parameter. The azimuthal velocity is much larger than the radial or axial velocity. There is radially outward flow near the crystal-melt interface which should be beneficial for the mass transport of dopants and species.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleThermoelectrically Driven Melt Motion During Floating Zone Crystal Growth With an Axial Magnetic Field
    typeJournal Paper
    journal volume120
    journal issue4
    journal titleJournal of Fluids Engineering
    identifier doi10.1115/1.2820748
    journal fristpage839
    journal lastpage843
    identifier eissn1528-901X
    keywordsCrystal growth
    keywordsMotion
    keywordsMagnetic fields
    keywordsCrystals
    keywordsCurrent
    keywordsSemiconductors (Materials)
    keywordsFlow (Dynamics) AND Temperature
    treeJournal of Fluids Engineering:;1998:;volume( 120 ):;issue: 004
    contenttypeFulltext
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