Abstract: Two copper (Cu) substrates were bonded using silver (Ag) and indium (In) and annealed at 200–250 آ°C to convert the joints into the solid solution (Ag) for enhanced strength and ductility. Cu–Cu pair was chosen so ...

Abstract: Silver flip-chip joints between silicon (Si) chips and copper (Cu) substrates were fabricated using a solid-state bonding process without any solder and without flux. The bonding process was ...

Abstract: Creep of metals has been investigated by means of the endochronic constitutive equation. This is a unified approach. Transient creep tests have been conducted on 304 stainless-steel specimens ...

Abstract: Pure gold (Au) is used as a bonding medium to bond silicon (Si) chips to alumina substrates. The bonding process is performed at 260 °C with only 150 psi (1.0 MPa) static pressure ...

Abstract: Formation of pure silver (Ag) flip-chip interconnect of silicon (Si) chips on copper (Cu) substrates is reported. Arrays of Ag columns, each 36 μm in height and 40 μm in diameter, are ...

Abstract: A flip-chip interconnect configuration with coplanar strip (CPS) lines on printed circuit boards (PCBs) is reported for millimeter-wave applications. For CPS lines, the signal and ground electrodes ...

Abstract: A fundamental study is carried out to investigate the microstructure and surface treatment possibilities of 304 stainless steel (304SS) substrates. To expose the microstructure, mirror-finished ...

Abstract: Recent progress in bonding materials is briefly reviewed with highlights of some of the advantages and disadvantages of the various attachment processes. The principle and experimental results ...

Abstract: Copper–silver (Cu–Ag) composite flip-chip interconnect between silicon (Si) chips and Cu substrates is demonstrated. Array of Cu–Ag columns, each 28 μm in height and 40 μm in diameter, is ...