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    A Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method

    Source: Journal of Heat Transfer:;2012:;volume( 134 ):;issue: 001::page 12301
    Author:
    Youhei Takagi
    ,
    Sadik Dost
    ,
    Yasunori Okano
    DOI: 10.1115/1.4004803
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the traveling heater method growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.
    keyword(s): Crystals , Computer simulation , Magnetic fields , Silicon , Travel , Rotation , Force AND Flow (Dynamics) ,
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      A Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method

    URI
    https://yetl.yabesh.ir/yetl1/handle/yetl/149572
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    • Journal of Heat Transfer

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    contributor authorYouhei Takagi
    contributor authorSadik Dost
    contributor authorYasunori Okano
    date accessioned2017-05-09T00:52:34Z
    date available2017-05-09T00:52:34Z
    date copyrightJanuary, 2012
    date issued2012
    identifier issn0022-1481
    identifier otherJHTRAO-27930#012301_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/149572
    description abstractA numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the traveling heater method growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleA Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method
    typeJournal Paper
    journal volume134
    journal issue1
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4004803
    journal fristpage12301
    identifier eissn1528-8943
    keywordsCrystals
    keywordsComputer simulation
    keywordsMagnetic fields
    keywordsSilicon
    keywordsTravel
    keywordsRotation
    keywordsForce AND Flow (Dynamics)
    treeJournal of Heat Transfer:;2012:;volume( 134 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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