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contributor authorYouhei Takagi
contributor authorSadik Dost
contributor authorYasunori Okano
date accessioned2017-05-09T00:52:34Z
date available2017-05-09T00:52:34Z
date copyrightJanuary, 2012
date issued2012
identifier issn0022-1481
identifier otherJHTRAO-27930#012301_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/149572
description abstractA numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the traveling heater method growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.
publisherThe American Society of Mechanical Engineers (ASME)
titleA Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method
typeJournal Paper
journal volume134
journal issue1
journal titleJournal of Heat Transfer
identifier doi10.1115/1.4004803
journal fristpage12301
identifier eissn1528-8943
keywordsCrystals
keywordsComputer simulation
keywordsMagnetic fields
keywordsSilicon
keywordsTravel
keywordsRotation
keywordsForce AND Flow (Dynamics)
treeJournal of Heat Transfer:;2012:;volume( 134 ):;issue: 001
contenttypeFulltext


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