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    Study on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers

    Source: Journal of Manufacturing Science and Engineering:;2008:;volume( 130 ):;issue: 006::page 64501
    Author:
    Chun-Hsi Su
    ,
    Chii-Ruey Lin
    ,
    Guo-Tsai Liau
    ,
    Ching-Yu Chang
    DOI: 10.1115/1.2976120
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Microwave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from 20×20 μm2 to 30×80 μm2. The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are 1.1 V/μm and 5 V/μm, respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.
    keyword(s): Diamond films , Carbon nanotubes , Electron field emission , Microwaves , Plasma jets , Silicon AND Chemical vapor deposition ,
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      Study on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers

    URI
    https://yetl.yabesh.ir/yetl1/handle/yetl/138655
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    contributor authorChun-Hsi Su
    contributor authorChii-Ruey Lin
    contributor authorGuo-Tsai Liau
    contributor authorChing-Yu Chang
    date accessioned2017-05-09T00:29:18Z
    date available2017-05-09T00:29:18Z
    date copyrightDecember, 2008
    date issued2008
    identifier issn1087-1357
    identifier otherJMSEFK-28044#064501_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/138655
    description abstractMicrowave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from 20×20 μm2 to 30×80 μm2. The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are 1.1 V/μm and 5 V/μm, respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleStudy on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers
    typeJournal Paper
    journal volume130
    journal issue6
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.2976120
    journal fristpage64501
    identifier eissn1528-8935
    keywordsDiamond films
    keywordsCarbon nanotubes
    keywordsElectron field emission
    keywordsMicrowaves
    keywordsPlasma jets
    keywordsSilicon AND Chemical vapor deposition
    treeJournal of Manufacturing Science and Engineering:;2008:;volume( 130 ):;issue: 006
    contenttypeFulltext
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