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contributor authorChun-Hsi Su
contributor authorChii-Ruey Lin
contributor authorGuo-Tsai Liau
contributor authorChing-Yu Chang
date accessioned2017-05-09T00:29:18Z
date available2017-05-09T00:29:18Z
date copyrightDecember, 2008
date issued2008
identifier issn1087-1357
identifier otherJMSEFK-28044#064501_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/138655
description abstractMicrowave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from 20×20 μm2 to 30×80 μm2. The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are 1.1 V/μm and 5 V/μm, respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.
publisherThe American Society of Mechanical Engineers (ASME)
titleStudy on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers
typeJournal Paper
journal volume130
journal issue6
journal titleJournal of Manufacturing Science and Engineering
identifier doi10.1115/1.2976120
journal fristpage64501
identifier eissn1528-8935
keywordsDiamond films
keywordsCarbon nanotubes
keywordsElectron field emission
keywordsMicrowaves
keywordsPlasma jets
keywordsSilicon AND Chemical vapor deposition
treeJournal of Manufacturing Science and Engineering:;2008:;volume( 130 ):;issue: 006
contenttypeFulltext


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