Transfer of a Metal From a Transparent Film to the Surface of Silicon to Produce P-N Junction Solar Cells

Abstract

A new method is proposed for preparing silicon P -N junctions. The first consists in fixing a transparent plastic film coated with a thin layer of a conventional dopant on the surface of the wafer, then illuminating this sandwich with a higher power Q switched laser. Two successive pulses are used, the first being able to transfer the dopant from the film to the silicon surface, the second to induce a liquid phase diffusion incorporating the dopant into the silicon lattice. Solar cells have been prepared by using this process, implying several attractive features.