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dc.contributor.authorLiu, Dapeng
dc.contributor.authorPark, Seungbae
dc.date.accessioned2017-05-09T01:06:46Z
dc.date.available2017-05-09T01:06:46Z
dc.date.issued2014
dc.identifier.issn1528-9044
dc.identifier.otherep_136_01_014001.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl/handle/yetl/154457
dc.description.abstractThreedimensional (3D) packaging with throughsiliconvias (TSVs) is an emerging technology featuring smaller package size, higher interconnection density, and better performance; 2.5D packaging using silicon interposers with TSVs is an incremental step toward 3D packaging. Formation of TSVs and interconnection between chips and/or wafers are two key enabling technologies for 3D and 2.5D packaging, and different interconnection methods in chiptochip, chiptowafer, and wafertowafer schemes have been developed. This article reviews stateoftheart interconnection technologies reported in recent technical papers. Issues such as bump formation, assembly/bonding process, as well as underfill dispensing in each interconnection type are discussed.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleThree Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art
dc.typeJournal Paper
dc.journal.volume136
dc.journal.issue1
dc.journal.titleJournal of Electronic Packaging
dc.identifier.doi10.1115/1.4026615
dc.journal.fristpage14001
dc.journal.lastpage14001
dc.identifier.eissn1043-7398
dc.treeJournal of Electronic Packaging:;2014:;volume( 136 ):;issue: 001
dc.contenttypeFulltext


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