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contributor authorM. S. Wechsler
date accessioned2017-05-08T23:06:52Z
date available2017-05-08T23:06:52Z
date copyrightApril, 1979
date issued1979
identifier issn0094-4289
identifier otherJEMTA8-26868#114_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/92214
description abstractIt has been established that copper and other trace elements have a detrimental effect on the notch-impact properties of ferritic pressure vessel steels irradiated at reactor operating temperatures of about 288°C (550°F). The underlying cause, however, of this trace element effect has not been established. But based on radiation damage work on vanadium containing oxygen and iron containing nitrogen, a possible mechanism appears to involve stabilization of radiation-produced defects as a result of migration of impurity atoms to the defects where they become trapped. The evidence for this impurity-defect interaction in vanadium and iron is described, and its effect on radiation hardening and embrittlement is discussed. The influence of dislocation channeling in promoting the early onset of plastic instability is also discussed, and the possible relevance of dislocation channeling is indicated with regard to the radiation-produced increase in ductile-brittle transition temperature and decrease in ductile shelf energy.
publisherThe American Society of Mechanical Engineers (ASME)
titleThe Influence of Impurity-Defect Interactions on Radiation Hardening and Embrittlement
typeJournal Paper
journal volume101
journal issue2
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.3443661
journal fristpage114
journal lastpage121
identifier eissn1528-8889
keywordsRadiation (Physics)
keywordsHardening
keywordsEmbrittlement
keywordsIron
keywordsDislocations
keywordsProduct quality
keywordsPressure vessels
keywordsDuctile-brittle transition
keywordsTemperature
keywordsAtoms
keywordsCopper
keywordsSteel
keywordsNitrogen
keywordsOxygen
keywordsOperating temperature AND Mechanisms
treeJournal of Engineering Materials and Technology:;1979:;volume( 101 ):;issue: 002
contenttypeFulltext


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