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contributor authorO. D. Sherby
contributor authorA. K. Miller
date accessioned2017-05-08T23:06:49Z
date available2017-05-08T23:06:49Z
date copyrightOctober, 1979
date issued1979
identifier issn0094-4289
identifier otherJEMTA8-26872#387_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/92185
description abstractIt is now possible to predict quantitatively the high temperature mechanical behavior of pure metals, solid solution alloys and dispersion hardened alloys, based on an understanding of a number of physical factors influencing power law creep, including: (a) atom mobility by lattice diffusion and by dislocation pipe diffusion, (b) elastic constants of the matrix material, (c) subgrain size, (d) stacking fault energy, and (e) crystallographic texture. This quantitative picture can be extended and generalized to transient situations using the work hardening-recovery approach, and strengthening due to back stresses, solutes, and irradiation can be incorporated within the same framework. The resulting set of constitutive equations for creep rests on a firm physical foundation and yet can predict the high-temperature behavior of materials under the complex histories typical of technological applications.
publisherThe American Society of Mechanical Engineers (ASME)
titleCombining Phenomenology and Physics in Describing the High Temperature Mechanical Behavior of Crystalline Solids
typeJournal Paper
journal volume101
journal issue4
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.3443708
journal fristpage387
journal lastpage395
identifier eissn1528-8889
keywordsPhysics
keywordsMechanical behavior
keywordsCrystals
keywordsHigh temperature
keywordsCreep
keywordsDiffusion (Physics)
keywordsAlloys
keywordsIrradiation (Radiation exposure)
keywordsStress
keywordsHardening
keywordsTexture (Materials)
keywordsConstitutive equations
keywordsAtoms
keywordsMetals
keywordsPipes
keywordsDislocations
keywordsElastic constants AND Solid solutions
treeJournal of Engineering Materials and Technology:;1979:;volume( 101 ):;issue: 004
contenttypeFulltext


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