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contributor authorObasi, Chidiebere Ogonnaya
contributor authorAhmad, Abubakar Soje
contributor authorOkoroh, Doris O.
contributor authorObi, Echezona Simon
date accessioned2025-04-21T10:15:23Z
date available2025-04-21T10:15:23Z
date copyright11/22/2024 12:00:00 AM
date issued2024
identifier issn2332-8983
identifier otherners_011_02_022002.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4305809
description abstractThe need for the replacement of cadmium, indium, and tellurium in their compounds for sensor applications is a novel study. The copper zinc tin sulfide (Cu2ZnSnS4) thin films were synthesized from Cu (99.99%), Sn (99.99%), and Zn (99.99%) using the thermal evaporation method. The same volumetric parameters were maintained throughout the synthesis process. The films were further irradiated using an isotope of cesium-137 (Cs-137) from a gamma source at different doses (0–0.6 kGy) and dose rates of 0.1007 Gy/h at room temperature. Both the pristine (0 kGy) and irradiated (0.1, 0.3, and 0.6 kGy) films were characterized with a Raman spectroscope, a field emission scanning electron microscope (FESEM) with the JEOL JSM-7600F model, energy dispersive X-rays (EDX), an ultraviolet–visible–near infrared (UV–Vis–NIR) spectroscope, and four-point probe techniques. The Raman results confirmed that all the films for both pristine and irradiated films have a main and secondary phases. The EDX results showed that the pristine and 0.1 kGy films were Cu-rich films, while the 0.3 kGy and 0.6 kGy films turned out to be Zn-rich films with an increase in gamma radiation dose. The optical properties of all the films showed also that the band gap decreased from 1.6 to 1.48±0.03 eV for the pristine and irradiated films, while the electrical resistivity results decreased as the gamma radiation dose increased. However, as the structural, optical, and electrical properties of the Cu2ZnSnS4 thin films responded linearly with the increasing gamma radiation dose, this suggests the usefulness and possibility of designing a new solid-state sensor for dosimetry applications to replace cadmium telluride (CdTe) and copper indium gallium sulfide (CIGS) thin films.
publisherThe American Society of Mechanical Engineers (ASME)
titleInvestigating the Suitability of Cu2ZnSnS4 Thin Films for Gamma Radiation Dosimetry Applications in Nonmedical Environments
typeJournal Paper
journal volume11
journal issue2
journal titleJournal of Nuclear Engineering and Radiation Science
identifier doi10.1115/1.4067015
journal fristpage22002-1
journal lastpage22002-8
page8
treeJournal of Nuclear Engineering and Radiation Science:;2024:;volume( 011 ):;issue: 002
contenttypeFulltext


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