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contributor authorRowe, Logan P.
contributor authorKaczkowski, Alexander J.
contributor authorLin, Tung-Wei
contributor authorHorn, Gavin P.
contributor authorJohnson, Harley T.
date accessioned2022-05-08T08:24:14Z
date available2022-05-08T08:24:14Z
date copyright1/12/2022 12:00:00 AM
date issued2022
identifier issn0094-4289
identifier othermats_144_3_031001.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4283886
description abstractA nondestructive photoelastic method is presented for characterizing surface microcracks in monocrystalline silicon wafers, calculating the strength of the wafers, and predicting Weibull parameters under various loading conditions. Defects are first classified through thickness infrared photoelastic images using a support vector machine-learning algorithm. Characteristic wafer strength is shown to vary with the angle of applied uniaxial tensile load, showing greater strength when loaded perpendicular to the wire speed direction than when loaded along the wire speed direction. Observed variations in characteristic strength and Weibull shape modulus with applied tensile loading direction stem from the distribution of crack orientations and the bulk stress field acting on the microcracks. Using this method, it is possible to improve manufacturing processes for silicon wafers by rapidly, accurately, and nondestructively characterizing large batches in an automated way.
publisherThe American Society of Mechanical Engineers (ASME)
titleNondestructive Photoelastic and Machine Learning Characterization of Surface Cracks and Prediction of Weibull Parameters for Photovoltaic Silicon Wafers
typeJournal Paper
journal volume144
journal issue3
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.4052673
journal fristpage31001-1
journal lastpage31001-12
page12
treeJournal of Engineering Materials and Technology:;2022:;volume( 144 ):;issue: 003
contenttypeFulltext


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