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contributor authorDeng, Chengcheng
contributor authorYu, Xiaoxiang
contributor authorHuang, Xiaoming
contributor authorYang, Nuo
date accessioned2017-11-25T07:16:51Z
date available2017-11-25T07:16:51Z
date copyright2017/1/3
date issued2017
identifier issn0022-1481
identifier otherht_139_05_054504.pdf
identifier urihttp://138.201.223.254:8080/yetl1/handle/yetl/4234244
description abstractA new way was proposed to enhance the interfacial thermal conductance (ITC) of silicon carbide (SiC) composite through the overlapped carbon nanotubes (CNTs) and intertube atoms. By nonequilibrium molecular dynamics (NEMD) simulations, the dependence of ITC on both the number of intertube atoms and the temperature was studied. It is indicated that the ITC can be significantly enhanced by adding intertube atoms and finally becomes saturated with the increase of the number of intertube atoms. And the mechanism is discussed by analyzing the probability distributions of atomic forces and vibrational density of states (VDOS). This work may provide some guidance on enhancing the ITC of CNT-based composites.
publisherThe American Society of Mechanical Engineers (ASME)
titleEnhancement of Interfacial Thermal Conductance of SiC by Overlapped Carbon Nanotubes and Intertube Atoms
typeJournal Paper
journal volume139
journal issue5
journal titleJournal of Heat Transfer
identifier doi10.1115/1.4035998
journal fristpage54504
journal lastpage054504-4
treeJournal of Heat Transfer:;2017:;volume( 139 ):;issue: 005
contenttypeFulltext


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