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contributor authorChatterjee, Abhish
contributor authorBeheshti, Ali
contributor authorPolycarpou, Andreas A.
contributor authorBellon, Pascal
date accessioned2017-05-09T01:33:49Z
date available2017-05-09T01:33:49Z
date issued2016
identifier issn0742-4787
identifier othertrib_138_03_031402.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/162677
description abstractFinite element (FE) simulations were performed to study yielding in single and bilayer (BL) film systems using a “yield zone mapâ€‌ approach. Onset of yielding was observed at the interface, substrate, surface, and film in HfB2/silicon and HfB2/stainless steel systems. The interface yield zone in HfB2/stainless steel system was found to be larger due to the dominant effect of interfacial stress gradients. Based on the FE simulations, empirical equations were derived for the maximum contact pressure required to initiate yield at the interface. For BL/substrate systems, onset of yield at the lower film/substrate interface occurred when film thickness ratio was in the range 0.5–5. The maximum contact pressure associated with the initial yielding at this interface is minimum compared to other locations. From the design point of view, for a BL system the preferable film thickness ratio was found to be 20, whereas the optimum hardness ratio ranges from 2 to 4. For these values, maximum contact pressure is very high (∼30 GPa), and thus, yield onset can be avoided at lower film/substrate interfaces. In addition, based on the obtained results, the advantages and disadvantages of using a BL film as compared to a single film and their relevance to practical applications are discussed.
publisherThe American Society of Mechanical Engineers (ASME)
titleYield Maps for Single and Bilayer Thin Films Under Scratch
typeJournal Paper
journal volume138
journal issue3
journal titleJournal of Tribology
identifier doi10.1115/1.4032519
journal fristpage31402
journal lastpage31402
identifier eissn1528-8897
treeJournal of Tribology:;2016:;volume( 138 ):;issue: 003
contenttypeFulltext


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