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contributor authorTavakkoli, Fatemeh
contributor authorEbrahimi, Siavash
contributor authorWang, Shujuan
contributor authorVafai, Kambiz
date accessioned2017-05-09T01:30:28Z
date available2017-05-09T01:30:28Z
date issued2016
identifier issn0022-1481
identifier othergtp_138_10_102601.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/161626
description abstractA comprehensive analysis and optimization of a threedimensional integrated circuit (3D IC) structure and its thermophysical attributes are presented in this work. The thermophysical and geometrical attributes studied in this paper include the die, device layer, heat sink, and heat spreader, which are critical structures within a 3D IC. The effect of the power density of the device layer which is the source of heat generation within the chip as well as the through silicon vias (TSV) and microbumps is also considered in our investigation. The thermophysical and geometrical parameters that have a significant impact on the thermal signature of the 3D IC as well as those that have an insignificant impact were established. The comprehensive analysis of different geometrical and thermophysical attributes can guide the design and optimization of a 3D IC structure and decrease the cost.
publisherThe American Society of Mechanical Engineers (ASME)
titleThermophysical and Geometrical Effects on the Thermal Performance and Optimization of a Three Dimensional Integrated Circuit
typeJournal Paper
journal volume138
journal issue8
journal titleJournal of Heat Transfer
identifier doi10.1115/1.4033138
journal fristpage82101
journal lastpage82101
identifier eissn1528-8943
treeJournal of Heat Transfer:;2016:;volume( 138 ):;issue: 008
contenttypeFulltext


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