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contributor authorRibeka Takahashi
contributor authorDikshya Prasai
contributor authorBrent L. Adams
contributor authorChristopher A. Mattson
date accessioned2017-05-09T00:50:56Z
date available2017-05-09T00:50:56Z
date copyrightJanuary, 2012
date issued2012
identifier issn0094-4289
identifier otherJEMTA8-27149#011003_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/149021
description abstractA method is presented for adapting the classical Bishop-Hill model to the requirements of elastic/yield-limited design in metals of arbitrary crystallographic texture. The proposed Hybrid Bishop-Hill (HBH) model, which will be applied to ductile FCC metals, retains the “stress corners” of the polyhedral Bishop-Hill yield surface. However, it replaces the ‘maximum work criterion’ with a criterion that maximizes the projection of the applicable local corner stress state onto the macroscopic stress state. This compromise leads to a model that is much more accessible to yield-limited design problems. Demonstration of performance for the HBH model is presented for an extensive database for oxygen free electronic copper. The design problem considered is a hole-in-a-plate configuration of thin sheets loaded in uniaxial tension in arbitrary directions relative to the principal directions of material orthorhombicity. Results obtained demonstrate that HBH-based elastic/yield limited design is capable of predicting complex and highly nonintuitive behaviors, even within standard problems.
publisherThe American Society of Mechanical Engineers (ASME)
titleHybrid Bishop-Hill Model for Elastic-Yield Limited Design With Non-orthorhombic Polycrystalline Metals
typeJournal Paper
journal volume134
journal issue1
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.4004829
journal fristpage11003
identifier eissn1528-8889
keywordsStress
keywordsCorners (Structural elements)
keywordsDesign
keywordsDatabases
keywordsYield strength
keywordsMetals AND Texture (Materials)
treeJournal of Engineering Materials and Technology:;2012:;volume( 134 ):;issue: 001
contenttypeFulltext


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