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contributor authorWang Ze-jun
contributor authorJing Hong-yang
date accessioned2017-05-09T00:30:20Z
date available2017-05-09T00:30:20Z
date copyrightFebruary, 2008
date issued2008
identifier issn0094-9930
identifier otherJPVTAS-28489#011208_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/139235
description abstractFor the purpose of finding a way to control effectively the residual thermal stresses induced by local heat treatment on spherical vessels, a thermal tracing program is developed successfully based on the transient thermal analysis and controlling method of average temperature of nodes located in an “observed region.” Typical calculation cases reveal that the local heat treatment process itself does cause obvious residual thermal stress that is high enough to cause yield when concentrated heating on small region is adopted, but decentralized heating on a larger region can lower effectively the residual thermal stresses to a rather desirable level. It can be found through a one by one analysis of ten factors, which are possibly influential on residual thermal stress: arc radius of heated region, holding temperature, volume, and wall thickness of the vessel are primary effective factors. The bandwidth of the annular insulated region, the heating rate, and the size of the observed region are secondary factors. Heating pattern, holding time, and cooling rate can hardly affect the residual thermal stress. Considering the primary factors except holding temperature, and taking 30% of yield stress as the expected residual thermal stress level, the recommended arc radius of heated region should be 2.2Rt in minimum.
publisherThe American Society of Mechanical Engineers (ASME)
titleResidual Thermal Stresses Induced by Local Heat Treatment on Spherical Vessels and Their Influential Factors
typeJournal Paper
journal volume130
journal issue1
journal titleJournal of Pressure Vessel Technology
identifier doi10.1115/1.2826435
journal fristpage11208
identifier eissn1528-8978
treeJournal of Pressure Vessel Technology:;2008:;volume( 130 ):;issue: 001
contenttypeFulltext


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