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contributor authorDemitris Kouris
contributor authorAlonso Peralta
contributor authorKarl Sieradzki
date accessioned2017-05-08T23:59:47Z
date available2017-05-08T23:59:47Z
date copyrightApril, 1999
date issued1999
identifier issn0094-4289
identifier otherJEMTA8-26997#129_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/122241
description abstractSurface defects corresponding to adatoms, vacancies and steps interact, affecting and often dominating kinetic processes associated with thin-film growth. A discrete harmonic model for the evaluation of the interaction energy between surface defects is presented. It is based on the concept of eigenstrains and allows for the accurate evaluation of the elastic field, both at the immediate vicinity of the defects, as well as in the far field. Results for the interaction energy suggest conditions for which a body-centered-cubic crystal surface will grow in a stable, two-dimensional, step-flow mode. In order to verify the accuracy of the discrete elastic model, we present results of atomic simulations that incorporate Embedded Atom Method (EAM) potentials. The discrete elastic model results compare favorably with results from our atomic EAM simulations and agree with the far-field predictions of continuum elastic theory.
publisherThe American Society of Mechanical Engineers (ASME)
titleElastic Interaction of Defects on Crystal Surfaces
typeJournal Paper
journal volume121
journal issue2
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.2812357
journal fristpage129
journal lastpage135
identifier eissn1528-8889
keywordsCrystals
keywordsProduct quality
keywordsEngineering simulation
keywordsThin films
keywordsFlow (Dynamics) AND Atoms
treeJournal of Engineering Materials and Technology:;1999:;volume( 121 ):;issue: 002
contenttypeFulltext


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