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    A New Accurate Closed Form Analytical Solution for Junction Temperature of High Powered Devices 

    Source: Journal of Electronic Packaging:;2014:;volume( 136 ):;issue: 001:;page 11007
    Author(s): Ling, J. H. L.; Tay, A. A. O.
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: The peak junction temperature has a profound effect on the operational lifetime and performance of high powered microwave devices. Although numerical analysis can help to estimate the peak junction temperature, it can be ...
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    A New Analytical Method for Calculating Maximum Junction Temperature of Packaged Devices Incorporating the Temperature Distribution at the Base of the Substrate 

    Source: Journal of Electronic Packaging:;2015:;volume( 137 ):;issue: 001:;page 14502
    Author(s): Ling, J. H. L.; Tay, A. A. O.
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: All current analytical methods for calculating junction temperature of field effect transistor (FET) and monolithic microwave integrated circuits (MMIC) devices have assumed a constant uniform temperature at the base of ...
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