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    Techniques to Predict Dislocation Generation During Growth of Silicon Ribbon 

    Source: Journal of Engineering Materials and Technology:;1987:;volume( 109 ):;issue: 003:;page 209
    Author(s): C. T. Tsai; R. J. De Angelis; O. W. Dillon
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper describes the numerical techniques that are used to predict stresses, strains, dislocation densities, and buckling during the growth of flat plate silicon. High quality silicon ribbon ...
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    The Constitutive Equation for Silicon and Its Use in Crystal Growth Modeling 

    Source: Journal of Engineering Materials and Technology:;1990:;volume( 112 ):;issue: 002:;page 183
    Author(s): C. T. Tsai; O. W. Dillon; R. J. De Angelis
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A stress analysis that describes the crystal growing process requires a material model that is valid over a wide temperature range and includes dislocation motion and multiplication. The stresses ...
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