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Techniques to Predict Dislocation Generation During Growth of Silicon Ribbon
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: This paper describes the numerical techniques that are used to predict stresses, strains, dislocation densities, and buckling during the growth of flat plate silicon. High quality silicon ribbon ...
The Constitutive Equation for Silicon and Its Use in Crystal Growth Modeling
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: A stress analysis that describes the crystal growing process requires a material model that is valid over a wide temperature range and includes dislocation motion and multiplication. The stresses ...