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RISBuoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: This paper treats the buoyant convection of a molten semiconductor in a cylindrical crucible with a vertical axis, with a uniform vertical magnetic field, and with a non-axisymmetric temperature. ...
Forced Convection During Liquid Encapsulated Crystal Growth With an Axial Magnetic Field
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: This paper treats the forced convection, which is produced by the rotation of the crystal about its vertical centerline during the liquid-encapsulated Czochralski or Kyropoulos growth of compound ...
Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: This paper presents a model for the unsteady species transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. ...
Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: During the magnetically-stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) ...