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    Comparative Study on Power Module Architectures for Modularity and Scalability 

    Source: Journal of Electronic Packaging:;2020:;volume( 142 ):;issue: 004:;page 040801-1
    Author(s): Lu, Mei-Chien
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Silicon carbide (SiC) wide bandgap power electronics are being applied in hybrid electric vehicle (HEV) and electrical vehicles (EV). The Department of Energy (DOE) has set target performance goals for 2025 to promote EV ...
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    Hybrid Bonding for Ultra-High-Density Interconnect 

    Source: Journal of Electronic Packaging:;2024:;volume( 146 ):;issue: 003:;page 30802-1
    Author(s): Lu, Mei-Chien
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Hybrid bonding is the technology for interchip ultrahigh-density interconnect at pitch smaller than 10 μm. The feasibility at wafer-to-wafer level bonding with bond pad pitch of sub-0.5 μm has been demonstrated with scaling ...
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    Enhanced Sintered Silver for SiC Wide Bandgap Power Electronics Integrated Package Module 

    Source: Journal of Electronic Packaging:;2019:;volume( 141 ):;issue: 003:;page 31002
    Author(s): Lu, Mei-Chien
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Thermal interface materials (TIMs) are crucial elements for packaging of power electronics. In particular, development of high-temperature lead-free die-attach TIMs for silicon carbide wide bandgap power electronics is a ...
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    Enhanced Sintered Silver for SiC Wide Bandgap Power Electronics Integrated Package Module 

    Source: Journal of Electronic Packaging:;2019:;volume( 141 ):;issue: 003:;page 31002
    Author(s): Lu, Mei-Chien
    Publisher: American Society of Mechanical Engineers (ASME)
    Abstract: Thermal interface materials (TIMs) are crucial elements for packaging of power electronics. In particular, development of high-temperature lead-free die-attach TIMs for silicon carbide wide bandgap power electronics is a ...
    Request PDF
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