Inhibiting Intermetallic Compound Growth at the Cu/Sn Interface Through the Electrochemical Deposition of Multiwalled Carbon Nanotubes on Cu

Abstract

Abstract. This paper presents a method to enhance the reliability of Cu/Sn interfaces in semiconductor devices by inhibiting the formation of intermetallic compounds (IMCs). We explored the electrochemical deposition of multiwalled carbon nanotubes (MWCNTs) at the joint interface between Cu and Sn to reduce IMC growth. The surface-treated MWCNTs were utilized to improve electrical conductivity and serve as a diffusion barrier, effectively limiting the formation of Cu6Sn5 and Cu3Sn IMCs at the Cu/Sn interface. Characterization techniques such as cyclic voltammetry (CV), X-ray diffraction (XRD), X-ray photo-electron spectroscopy (XPS), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS) were employed to analyze the microstructure and electrical performance of the Cu-MWCNT-Sn joints. The results demonstrated that incorporating MWCNTs significantly reduced the IMC layer thickness and improved electrical conductivity. These findings suggest that MWCNT-coated Cu/Sn interfaces present a promising solution to enhance the performance and longevity of semiconductor packaging.