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    Nonlinear Electro-Thermal Monte Carlo Device Simulation

    Source: Journal of Heat Transfer:;2020:;volume( 142 ):;issue: 002::page 022106-1
    Author:
    Merrill, Ky
    ,
    Saraniti, Marco
    DOI: 10.1115/1.4045305
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A model of self-heating is incorporated into a cellular Monte Carlo (CMC) particle device simulator. This is done through the solution of an energy balance equation (EBE) for phonons, which self-consistently couples charge and heat transport in the simulation. First, several tests are performed to verify the applicability and accuracy of the proposed nonlinear iterative solver in the presence of convective boundary conditions, as compared to a finite element analysis (FEA) solver as well as using the Kirchhoff Transformation. Finally, a fully coupled electro-thermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is performed, and the effects of nonideal interfaces and boundary conditions are studied.
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      Nonlinear Electro-Thermal Monte Carlo Device Simulation

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    contributor authorMerrill, Ky
    contributor authorSaraniti, Marco
    date accessioned2022-02-04T22:54:01Z
    date available2022-02-04T22:54:01Z
    date copyright2/1/2020 12:00:00 AM
    date issued2020
    identifier issn0022-1481
    identifier otherht_142_02_022106.pdf
    identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4275663
    description abstractA model of self-heating is incorporated into a cellular Monte Carlo (CMC) particle device simulator. This is done through the solution of an energy balance equation (EBE) for phonons, which self-consistently couples charge and heat transport in the simulation. First, several tests are performed to verify the applicability and accuracy of the proposed nonlinear iterative solver in the presence of convective boundary conditions, as compared to a finite element analysis (FEA) solver as well as using the Kirchhoff Transformation. Finally, a fully coupled electro-thermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is performed, and the effects of nonideal interfaces and boundary conditions are studied.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleNonlinear Electro-Thermal Monte Carlo Device Simulation
    typeJournal Paper
    journal volume142
    journal issue2
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4045305
    journal fristpage022106-1
    journal lastpage022106-8
    page8
    treeJournal of Heat Transfer:;2020:;volume( 142 ):;issue: 002
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian