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    A Study of Back Electrode Stacked With Low Cost Reflective Layers For High Efficiency Thin Film Silicon Solar Cell

    Source: Journal of Solar Energy Engineering:;2014:;volume( 136 ):;issue: 003::page 31002
    Author:
    Chang, Tsung
    ,
    Liu, Chao
    ,
    Lee, Wen
    ,
    Hsiao, Yu
    DOI: 10.1115/1.4025581
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: In this study, commercially available white paint is used as a pigmented dielectric reflector (PDR) in the fabrication of a lowcost back electrode stack with an Aldoped ZnO (AZO) layer for thinfilm silicon solar cell applications. An initial AZO film was deposited by the radiofrequency magnetron sputtering method. In order to obtain the highest transmittance and lowest resistivity of AZO film, process parameters such as sputtering power and substrate temperature were investigated. The optimal 100nmthick AZO film with low resistivity and high transmittance in the visible region are 6.4 أ— 10−3 خ©آ·cm and above 80%, respectively. Using gluelike white paint doped withTiO2 nanoparticles as the PDR enhances the external quantum efficiency (EQE) of a microcrystalline silicon absorptive layer owing to the doped white particles improving Fabry–Pأ©rot interference (FPI), which raises reflectance and scattering ability. To realize the cost down requirement, decreasing the noble metal film thickness such as a 30nmthick silver reflector film, and a small doping particle diameter (D50 = 135 nm) and a high solid content (20%) lead to FPI improvement and a great EQE, which is attributed to improved scattering and reflectivity because of optimum diameter (Dopt) and thicker PDR film. The results indicate that white paint can be used as a reflector coating in lowcost backelectrode structures in highperformance electronics.
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      A Study of Back Electrode Stacked With Low Cost Reflective Layers For High Efficiency Thin Film Silicon Solar Cell

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    https://yetl.yabesh.ir/yetl1/handle/yetl/156284
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    • Journal of Solar Energy Engineering

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    contributor authorChang, Tsung
    contributor authorLiu, Chao
    contributor authorLee, Wen
    contributor authorHsiao, Yu
    date accessioned2017-05-09T01:12:25Z
    date available2017-05-09T01:12:25Z
    date issued2014
    identifier issn0199-6231
    identifier othersol_136_03_031002.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/156284
    description abstractIn this study, commercially available white paint is used as a pigmented dielectric reflector (PDR) in the fabrication of a lowcost back electrode stack with an Aldoped ZnO (AZO) layer for thinfilm silicon solar cell applications. An initial AZO film was deposited by the radiofrequency magnetron sputtering method. In order to obtain the highest transmittance and lowest resistivity of AZO film, process parameters such as sputtering power and substrate temperature were investigated. The optimal 100nmthick AZO film with low resistivity and high transmittance in the visible region are 6.4 أ— 10−3 خ©آ·cm and above 80%, respectively. Using gluelike white paint doped withTiO2 nanoparticles as the PDR enhances the external quantum efficiency (EQE) of a microcrystalline silicon absorptive layer owing to the doped white particles improving Fabry–Pأ©rot interference (FPI), which raises reflectance and scattering ability. To realize the cost down requirement, decreasing the noble metal film thickness such as a 30nmthick silver reflector film, and a small doping particle diameter (D50 = 135 nm) and a high solid content (20%) lead to FPI improvement and a great EQE, which is attributed to improved scattering and reflectivity because of optimum diameter (Dopt) and thicker PDR film. The results indicate that white paint can be used as a reflector coating in lowcost backelectrode structures in highperformance electronics.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleA Study of Back Electrode Stacked With Low Cost Reflective Layers For High Efficiency Thin Film Silicon Solar Cell
    typeJournal Paper
    journal volume136
    journal issue3
    journal titleJournal of Solar Energy Engineering
    identifier doi10.1115/1.4025581
    journal fristpage31002
    journal lastpage31002
    identifier eissn1528-8986
    treeJournal of Solar Energy Engineering:;2014:;volume( 136 ):;issue: 003
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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