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    Thermal Stress CAD Analysis of a Multi-Layer Composite of an Operating Transistor Package

    Source: Journal of Electronic Packaging:;1990:;volume( 112 ):;issue: 001::page 77
    Author:
    Agha J. Ghorieshi
    ,
    Umid R. Nejib
    DOI: 10.1115/1.2904345
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Thermal stress management is a major factor in the design of an electronic package. Thermal mismatch among the assembled components induces thermal stresses within the device. Finite element technique is utilized for three dimensional thermal stress analysis of a transistor with a free convection cooling system. Heat transfer analysis is used to determine the temperature distribution throughout the package for a given operating temperature. The data are then used to determine package stresses. The results show the shear stress concentration is higher at the corner of the chip. These values were found to be lower compared to those using temperature cycle analysis. An alternative method of lowering shear stresses in the chip is suggested.
    keyword(s): Composite materials , Computer-aided design , Thermal stresses , Transistors , Stress , Shear (Mechanics) , Temperature , Heat transfer , Cooling systems , Design , Finite element analysis , Natural convection , Cycles , Temperature distribution , Operating temperature , Electronic packages , Stress concentration AND Corners (Structural elements) ,
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      Thermal Stress CAD Analysis of a Multi-Layer Composite of an Operating Transistor Package

    URI
    https://yetl.yabesh.ir/yetl1/handle/yetl/106804
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    • Journal of Electronic Packaging

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    contributor authorAgha J. Ghorieshi
    contributor authorUmid R. Nejib
    date accessioned2017-05-08T23:32:27Z
    date available2017-05-08T23:32:27Z
    date copyrightMarch, 1990
    date issued1990
    identifier issn1528-9044
    identifier otherJEPAE4-26114#77_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/106804
    description abstractThermal stress management is a major factor in the design of an electronic package. Thermal mismatch among the assembled components induces thermal stresses within the device. Finite element technique is utilized for three dimensional thermal stress analysis of a transistor with a free convection cooling system. Heat transfer analysis is used to determine the temperature distribution throughout the package for a given operating temperature. The data are then used to determine package stresses. The results show the shear stress concentration is higher at the corner of the chip. These values were found to be lower compared to those using temperature cycle analysis. An alternative method of lowering shear stresses in the chip is suggested.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleThermal Stress CAD Analysis of a Multi-Layer Composite of an Operating Transistor Package
    typeJournal Paper
    journal volume112
    journal issue1
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2904345
    journal fristpage77
    journal lastpage80
    identifier eissn1043-7398
    keywordsComposite materials
    keywordsComputer-aided design
    keywordsThermal stresses
    keywordsTransistors
    keywordsStress
    keywordsShear (Mechanics)
    keywordsTemperature
    keywordsHeat transfer
    keywordsCooling systems
    keywordsDesign
    keywordsFinite element analysis
    keywordsNatural convection
    keywordsCycles
    keywordsTemperature distribution
    keywordsOperating temperature
    keywordsElectronic packages
    keywordsStress concentration AND Corners (Structural elements)
    treeJournal of Electronic Packaging:;1990:;volume( 112 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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