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dc.contributor.authorYe, Yixuan
dc.contributor.authorTang, Chao
dc.contributor.authorZhang, Yu
dc.contributor.authorDing, Han
dc.contributor.authorWang, Jian
dc.contributor.authorYe, Chang
dc.date.accessioned2026-08-23T08:16:06Z
dc.date.available2026-08-23T08:16:06Z
dc.date.copyright2026/03/01
dc.date.issued2026
dc.identifier.issn1087-1357
dc.identifier.othermanu-25-1642.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4316303
dc.description.abstractAbstract. Surface severe plastic deformation (SSPD) techniques have been widely used to enhance the surface integrity and mechanical performance of metallic materials via modifying surface microstructures and introducing compressive residual stress. In this study, we applied an electromagnetic (EM) compound field to assist a deformation-based surface strengthening technique known as ultrasonic nanocrystal surface modification (UNSM). EM-assisted UNSM outperforms its electric- or magnetic-assisted counterparts by producing a synergistic effect during processing, which leads to significant improvements in the surface hardness and the depth of the compressive residual stress layer in Ti64. X-ray diffraction (XRD) analysis and viscoplastic self-consistent (VPSC) modeling further revealed that the EM field promotes the activation of ⟨c+a⟩ dislocations, which facilitates strain accommodation and weakens crystallographic texture. These findings provide new insights into plasticity control of hard-to-deform metals, with promising implications for advanced forming and surface treatment technologies.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleElectromagnetic Compound Field Enhances Surface Strengthening and Plasticity in Ultrasonic Nanocrystal Surface Modification of Ti64 Alloy
dc.typeJournal Paper
dc.journal.volume148
dc.journal.issue3
dc.journal.titleJournal of Manufacturing Science and Engineering
dc.identifier.doi10.1115/1.4070856
dc.journal.fristpage262
dc.journal.lastpage291
dc.page30
dc.treeJournal of Manufacturing Science and Engineering:;2026:;volume( 148 ):;issue:003
dc.contenttypeFulltext


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