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dc.contributor.authorHan, Changheon
dc.contributor.authorChun, Heebum
dc.contributor.authorLee, Jiho
dc.contributor.authorZhou, Fengfeng
dc.contributor.authorYun, Huitaek
dc.contributor.authorLee, ChaBum
dc.contributor.authorJun, Martin B.G.
dc.date.accessioned2024-12-24T19:10:56Z
dc.date.available2024-12-24T19:10:56Z
dc.date.copyright5/9/2024 12:00:00 AM
dc.date.issued2024
dc.identifier.issn1087-1357
dc.identifier.othermanu_146_7_070906.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4303442
dc.description.abstractIn smart manufacturing, semiconductors play an indispensable role in collecting, processing, and analyzing data, ultimately enabling more agile and productive operations. Given the foundational importance of wafers, the purity of a wafer is essential to maintain the integrity of the overall semiconductor fabrication. This study proposes a novel automated visual inspection (AVI) framework for scrutinizing semiconductor wafers from scratch, capable of identifying defective wafers and pinpointing the location of defects through autonomous data annotation. Initially, this proposed methodology leveraged a texture analysis method known as gray-level co-occurrence matrix (GLCM) that categorized wafer images—captured via a stroboscopic imaging system—into distinct scenarios for high- and low-resolution wafer images. GLCM approaches further allowed for a complete separation of low-resolution wafer images into defective and normal wafer images, as well as the extraction of defect images from defective low-resolution wafer images, which were used for training a convolutional neural network (CNN) model. Consequently, the CNN model excelled in localizing defects on defective low-resolution wafer images, achieving an F1 score—the harmonic mean of precision and recall metrics—exceeding 90.1%. In high-resolution wafer images, a background subtraction technique represented defects as clusters of white points. The quantity of these white points determined the defectiveness and pinpointed locations of defects on high-resolution wafer images. Lastly, the CNN implementation further enhanced performance, robustness, and consistency irrespective of variations in the ratio of white point clusters. This technique demonstrated accuracy in localizing defects on high-resolution wafer images, yielding an F1 score greater than 99.3%.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleHybrid Semiconductor Wafer Inspection Framework via Autonomous Data Annotation
dc.typeJournal Paper
dc.journal.volume146
dc.journal.issue7
dc.journal.titleJournal of Manufacturing Science and Engineering
dc.identifier.doi10.1115/1.4065276
dc.journal.fristpage70906-1
dc.journal.lastpage70906-14
dc.page14
dc.treeJournal of Manufacturing Science and Engineering:;2024:;volume( 146 ):;issue: 007
dc.contenttypeFulltext


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