Dependence of Critical Stress Intensity Factor on Crack Depth From the Loading Boundary of Crystalline Silicon

Abstract

In the present work, an atomistic scale investigation is done on crystalline silicon to understand the effect of crack depth from the loading (pulling) boundary on the critical near-tip state of stress. For various depths of embedded cracks, the near-tip stress field has been calculated at the critical state just before the crack propagation initiation. This atomistically calculated stress field is found to be quite close to those found using continuum linear elasticity. Thereafter, the critical stress intensity factor (SIF) is calculated for all cases by fitting the atomistically calculated normal stress over inverse square-rooted distance from the crack tip. It has been found that the closer the crack is located to the loading boundary (i.e., lesser depth), the lower is the (locally calculated) critical SIF. This implies that it is easier to initiate crack propagation when the crack is located closer to the loading boundary. The claim is also strengthened by a similar observation of (globally calculated) boundary stresses at the critical state just before crack propagation initiation.