Show simple item record

dc.contributor.authorWang, Jun
dc.contributor.authorZhao, Yang
dc.contributor.authorChen, Han
dc.contributor.authorTang, Yan
dc.contributor.authorLiu, Guozhen
dc.contributor.authorLiang, Renli
dc.contributor.authorDai, Jiangnan
dc.contributor.authorChen, Changqing
dc.contributor.authorKang, Junyong
dc.contributor.authorCai, Duanjun
dc.date.accessioned2022-02-04T14:33:46Z
dc.date.available2022-02-04T14:33:46Z
dc.date.copyright2020/04/17/
dc.date.issued2020
dc.identifier.issn1043-7398
dc.identifier.otherep_142_03_031102.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4273917
dc.description.abstractWe demonstrate a novel ultraviolet (UV) light irradiation strategy to rapidly weld Cu nanowires (NWs) network and remove the organic residues for transparent electrodes. Shortly irradiated by UV light source, the Cu NWs could achieve junction welding in the absence of any thermal annealing process. This Cu NWs network shows high optoelectronic performance (39 Ω/sq at 90% transmittance at 550 nm) and outstanding flexibility under bending and twisting. Completely transparent light-emitting diode (LED) chips array was fabricated and has been lighted with bright top-surface emission. This method could provide a fast and convenient way to fabricate Cu NWs transparent electrodes onto various optoelectronic products.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleRapid Anneal-Free Welding of Cu Nanowires Network by Ultraviolet Light Irradiation for Transparent Electrodes in Optoelectronic Applications
dc.typeJournal Paper
dc.journal.volume142
dc.journal.issue3
dc.journal.titleJournal of Electronic Packaging
dc.identifier.doi10.1115/1.4046764
dc.page31102
dc.treeJournal of Electronic Packaging:;2020:;volume( 142 ):;issue: 003
dc.contenttypeFulltext


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record