Show simple item record

dc.contributor.authorLu, Bin
dc.contributor.authorChen, Ke
dc.contributor.authorMeng, W. J.
dc.contributor.authorKarki, Amar
dc.contributor.authorJin, Rongying
dc.date.accessioned2017-05-09T01:01:48Z
dc.date.available2017-05-09T01:01:48Z
dc.date.issued2013
dc.identifier.issn2166-0468
dc.identifier.otherjmnm_001_03_031001.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl/handle/yetl/152870
dc.description.abstractTransient liquid phase (TLP) bonding of Cu structures with a thin elemental Al intermediate bonding layer is being used to assemble Cubased, enclosed, microchannel heat exchangers (MHEs). The heterogeneous Cu/Al/Cu TLP bonding interface region, formed during the TLP bonding process, impacts heat transfer of the assembled MHE device. To evaluate the thermal resistance of TLP bonded Cu/Al/Cu interface regions, transient flash measurements were performed across bonding interface regions formed under various conditions, in combination with detailed structural examination and measurements of bulk mass density and specific heat. The flash method is shown to yield quantitative measurements of interfacial thermal resistance values. Our results provide guidance to developing bonding protocols for Cubased MHEs with optimized heat transfer performance.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleQuantification of Thermal Resistance of Transient Liquid Phase Bonded Cu/Al/Cu Interfaces for Assembly of Cu Based Microchannel Heat Exchangers
dc.typeJournal Paper
dc.journal.volume1
dc.journal.issue3
dc.journal.titleJournal of Micro and Nano
dc.identifier.doi10.1115/1.4024683
dc.journal.fristpage31001
dc.journal.lastpage31001
dc.identifier.eissn1932-619X
dc.treeJournal of Micro and Nano-Manufacturing:;2013:;volume( 001 ):;issue: 003
dc.contenttypeFulltext


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record