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dc.contributor.authorYan, Yi
dc.contributor.authorGuan, Youliang
dc.contributor.authorChen, Xu
dc.contributor.authorLu, Guo
dc.date.accessioned2017-05-09T00:57:45Z
dc.date.available2017-05-09T00:57:45Z
dc.date.issued2013
dc.identifier.issn1528-9044
dc.identifier.otherep_135_04_041003.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl/handle/yetl/151442
dc.description.abstractThe thermal and the optoelectronic performance of high power gallium arsenide (GaAs) laser diode dieattached with sintered silver joint were investigated. The thermal and mechanical characteristics of the Laser bar packaging were simulated by finite element analysis (FEA). On the basis of prior experimental observations, voids in the bonding layer were intentionally introduced in the FEA model to examine their effect on the laser diode operating in the continuouswave (CW) mode under different drive currents. The simulation results indicate that the quality of the bonding layer is very important to the heat dissipation capability of the packaging. Any void in the dieattach material would become a hotspot and thus deteriorate the optoelectronic performance of the laser diode. In addition, because of the coefficient of thermal expansion (CTE) mismatch between the laser bar and the copper heat sink, the interfacial thermomechanical stress will cause a noticeable curvature of the laser diode and a blueshift in the wavelength.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleEffects of Voids in Sintered Silver Joint on Thermal and Optoelectronic Performances of High Power Laser Diode
dc.typeJournal Paper
dc.journal.volume135
dc.journal.issue4
dc.journal.titleJournal of Electronic Packaging
dc.identifier.doi10.1115/1.4025247
dc.journal.fristpage41003
dc.journal.lastpage41003
dc.identifier.eissn1043-7398
dc.treeJournal of Electronic Packaging:;2013:;volume( 135 ):;issue: 004
dc.contenttypeFulltext


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