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dc.contributor.authorQingjun Cai
dc.contributor.authorBing-Chung Chen
dc.contributor.authorChailun Tsai
dc.contributor.authorChung-lung Chen
dc.date.accessioned2017-05-09T00:35:26Z
dc.date.available2017-05-09T00:35:26Z
dc.date.copyrightDecember, 2009
dc.date.issued2009
dc.identifier.issn1948-5085
dc.identifier.otherJTSEBV-28811#041009_1.pdf
dc.identifier.urihttp://yetl.yabesh.ir/yetl/handle/yetl/141976
dc.description.abstractA silicon heat spreader, called hexcell, is presented to develop thin, strong, interconnected, and scalable heat transfer devices for high power electronics cooling. Several key technical aspects, reflected characteristics of fabrication, thermomechanical, hermetic sealing, and heat transfer on wick structures, have been performed to underlie the system integration. The hexcell prototypes are developed through microelectromechanical system photolithography and dry-etch processes, associated with eutectic bonding to form a sealed silicon chamber. Hexcells are structurally optimized to minimize the stress, expanding the maximum operating pressure and temperature ranges. As a result, the developed hexcells can survive 0.32 MPa pressure difference and are able to sustain an operating temperature over 135°C. Experimental results of both helium and vapor leakage tests indicate that eutectic bonding with limited bonding surface area may not provide hermetic sealing. Vacuum sealing is achieved by introducing epoxy to fill the leak pine-holes on the bonding interface. The developed hexcell wick exhibits good heat and mass transport performance, reaching a maximum 300 W/cm2 cooling capacity with 35°C superheat as demonstrated with a prototype of a 2×2 mm2 heating area.
dc.publisherThe American Society of Mechanical Engineers (ASME)
dc.titleDevelopment of Scalable Silicon Heat Spreader for High Power Electronic Devices
dc.typeJournal Paper
dc.journal.volume1
dc.journal.issue4
dc.journal.titleJournal of Thermal Science and Engineering Applications
dc.identifier.doi10.1115/1.4001689
dc.journal.fristpage41009
dc.identifier.eissn1948-5093
dc.keywordsPressure
dc.keywordsTemperature
dc.keywordsVapors
dc.keywordsVacuum
dc.keywordsBonding
dc.keywordsSilicon
dc.keywordsLeakage
dc.keywordsFlat heat pipes
dc.keywordsStress
dc.keywordsHeat transfer
dc.keywordsSealing (Process)
dc.keywordsHelium
dc.keywordsHeat AND Heating
dc.treeJournal of Thermal Science and Engineering Applications:;2009:;volume( 001 ):;issue: 004
dc.contenttypeFulltext


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