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RISA Study on the Damage Layer Removal of Single-Crystal Silicon Wafer After Atmospheric-Pressure Plasma Etching
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: In this study, atmospheric-pressure (AP) plasma generated using He/O2/CF4 mixture as feed gas was used to etch the single-crystal silicon (100) wafer and the characteristics of the etched surface were investigated. The ...