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RISStudy on the Mechanism of Electrochemical Mechanical Polishing Mechanism of Single-Crystal 4H-SiC Based on Friction and Wear
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Electrochemical mechanical polishing (ECMP) technology can effectively enhance the material removal rate and surface quality of single-crystal silicon carbide (SiC). However, the material removal mechanism of ECMP on SiC ...