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RISStudy on the Mechanism of Electrochemical Mechanical Polishing Mechanism of Single-Crystal 4H-SiC Based on Friction and Wear
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Electrochemical mechanical polishing (ECMP) technology can effectively enhance the material removal rate and surface quality of single-crystal silicon carbide (SiC). However, the material removal mechanism of ECMP on SiC ...
Experimental Study on Electrochemically Assisted Friction and Wear of 4H-SiC Based on Advanced Oxidation Processes of Hydroxyl and Sulfate Radicals
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: An electrochemical composite polishing technology based on advanced oxidation processes (AOPs) was proposed to achieve efficient polishing of SiC. In this study, ball-on-disk friction and wear experiments were carried out ...