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RISTransient Three-Dimensional Thermal Simulation of a Fin Field-Effect Transistor With Electron–Phonon Heat Generation, Three Phonon Scattering, and Drift With Periodic Switching
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: The International Roadmap for Devices and Systems shows Fin field-effect transistor (FET) array transistors as the mainstream structure for logic devices. Traditional methods of Fourier heat transfer analysis that are ...