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RISCharacterization of the Interdependence Between the Light Output and Self-Heating of Gallium Nitride Light-Emitting Diodes
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: With the advent of gallium nitride (GaN) as an enabling material system for the solid-state lighting industry, high-power and high-brightness light-emitting diodes (LEDs) with wavelengths ranging from near ultraviolet to ...
Guidelines for Reduced-Order Thermal Modeling of Multifinger GaN HEMTs
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: The increasing demand for tightly integrated gallium nitride high electron mobility transistors (HEMT) into electronics systems requires accurate thermal evaluation. While these devices exhibit favorable electrical ...
Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current ...
Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ...