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RISThermal Modeling of Extreme Heat Flux Microchannel Coolers for GaN on SiC Semiconductor Devices
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Gallium nitride (GaN) highelectronmobility transistors (HEMTs) dissipate high power densities which generate hotspots and cause thermomechanical problems. Here, we propose and simulate GaNbased HEMT technologies that can ...