Show simple item record

contributor authorHe, Tao
contributor authorWang, Chang
contributor authorXie, Bin
contributor authorXu, ZhouLong
contributor authorYin, ZhouPing
contributor authorWu, Hao
date accessioned2026-08-23T08:07:10Z
date available2026-08-23T08:07:10Z
date copyright2026/06/01
date issued2026
identifier issn1043-7398
identifier otherep-25-1060.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4316106
description abstractAbstract. Hybrid bonding is recognized as one of the most promising technologies to meet the demand of miniaturization in future three-dimensional integrated circuits. However, the ever-shrinking of Cu pad size poses new challenges to the yield and reliability of hybrid bonding interface. In this study, we conducted thermomechanical finite element simulations to analyze the annealing and cooling process during Cu–SiCN hybrid bonding of both protruding and recessed upper Cu structures with different Cu pad sizes, utilizing a bilinear contact model to simulate the contact at the bonding interface. The results indicate that when the Cu pad size is relatively small (0.5 μm∼1.5 μm), particularly at 0.5 μm, the Cu–Cu bonding area featuring protruding Cu structure is 0.5 μm, which is 54% larger than that of 0.22 μm-recessed Cu pad structure, accompanied by a reduced thermomechanical stress by 39.81% (recessed Cu pad structure: 606.1 MPa, protruding Cu pad structure: 364.8 MPa). The results suggest that the former structure is more advantageous than the latter when the Cu pad size is less than 0.5 μm. Furthermore, we predict that the cracks are most likely to occur at the vertical Cu–SiCN sidewall. This study provides guidance for increasing the hybrid bonding area under shrunken Cu pad size conditions, and predicts the locations where interfacial cracks generate, which is promising in enhancing the yield as well as reliability of next-generation fine-pitch hybrid bonding process.
publisherThe American Society of Mechanical Engineers (ASME)
titleThermomechanical Finite Element Analysis of Cu–SiCN Hybrid Bonding With Protruding and Recessed Cu Pad in Three-Dimensional Integrated Circuits
typeJournal Paper
journal volume148
journal issue2
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.4071198
journal fristpage1455
journal lastpage1458
page4
treeJournal of Electronic Packaging:;2026:;volume( 148 ):;issue:002
contenttypeFulltext


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record