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contributor authorRao, Zhaoxia
contributor authorJin, Hanxun
contributor authorEngwall, Alison
contributor authorChason, Eric
contributor authorKim, Kyung-Suk
date accessioned2022-02-04T22:20:44Z
date available2022-02-04T22:20:44Z
date copyright7/8/2020 12:00:00 AM
date issued2020
identifier issn0021-8936
identifier othertsea_13_1_011024.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4275383
description abstractWe report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.
publisherThe American Society of Mechanical Engineers (ASME)
titleDetermination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements
typeJournal Paper
journal volume87
journal issue10
journal titleJournal of Applied Mechanics
identifier doi10.1115/1.4047572
journal fristpage0101006-1
journal lastpage0101006-12
page12
treeJournal of Applied Mechanics:;2020:;volume( 087 ):;issue: 010
contenttypeFulltext


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