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contributor authorMisic, B.
contributor authorPieters, B. E.
contributor authorRau, U.
date accessioned2017-05-09T01:23:39Z
date available2017-05-09T01:23:39Z
date issued2015
identifier issn0199-6231
identifier othersol_137_06_061004.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/159662
description abstractWe investigate the repair of interruptions in the back contact (P1) scribing line between two Mo back electrodes by thermally induced fractures. The fractures occur during Cu(In,Ga)Se2 (CIGS) absorber coevaporation, as it is applied in CIGS thinfilm module manufacturing and can effectively repair line interruptions of up to about 70 خ¼m. Additionally, we present that a thermal treatment after P1 laser scribing and before CIGS coevaporation can repair even interruptions of up to 1 mm. The fractures which are required for insulation are only of approximately 4 خ¼m width which indicates the potential for further reduction of the interconnection width in CIGS modules and therefore improvement of the electrical module efficiency.
publisherThe American Society of Mechanical Engineers (ASME)
titleThermal Repair of Incomplete Back Contact Insulation (P1) in Cu(In,Ga)Se2 Photovoltaic Thin Film Modules
typeJournal Paper
journal volume137
journal issue6
journal titleJournal of Solar Energy Engineering
identifier doi10.1115/1.4031214
journal fristpage61004
journal lastpage61004
identifier eissn1528-8986
treeJournal of Solar Energy Engineering:;2015:;volume( 137 ):;issue: 006
contenttypeFulltext


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